| 最大源漏极电压VdsDrain-Source Voltage |
|
| 栅源极击穿电压V(BR)GSGate-Source Voltage |
-50V |
| 漏极电流(Vgs=0V)IDSSDrain Current |
2.6mA~20mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage |
-0.15V~-0.2V(Vds=10V,Id=0.1uA） |
| 耗散功率PdPower Dissipation |
200mW/0.2W |
| Description & Applications |
TOSHIBA DUAL FIELD EFFECT TRANSIATOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE
LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS
|
| 描述与应用 |
东芝双硅场效应TRANSIATOR整体N通道连接类型
低噪声音频和差动放大器的应用程序
|