| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -1.5A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 200~500 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -140mV/-0.14V |
| 耗散功率PcPoWer Dissipation | 800mW/0.8W |
| Description & Applications | PNP Silicon epitaxial planar type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Features • High DC current gain • Low collector-emitter saturation voltage • High-speed switching |
| 描述与应用 | PNP硅外延平面型 高速开关应用 DC-DC转换器应用 频闪应用 特点 •高直流电流增益 •低集电极 - 发射极饱和电压 •高速开关 |