| 最大源漏极电压Vds Drain-Source Voltage | 8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 5V |
| 最大漏极电流Id Drain Current | 12.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.031Ω/Ohm @1A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.35-1.0V |
| 耗散功率Pd Power Dissipation | 6.25W |
| Description & Applications | N-Channel 1.2-V (G-S) MOSFET FEATURES • TrenchFET Power MOSFET • Industry First 1.2 V Rated MOSFET • Ultra Small MICRO FOOTChipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area |
| 描述与应用 | 1.2-V的N沟道MOSFET（G-S） •TrenchFET功率MOSFET •业界首款1.2 V额定MOSFET •超小型MICRO FOOT 芯片级 包装减少占位面积，简介 （0.62毫米），每占位面积导通电阻 |