| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | -1.5A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -2V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | Silicon PNP Epitaxial Type (PCT process) suitable for output stage of 3 watts amplifier； PC=1~2w; small flat package; complementary to 2SC2883 |
| 描述与应用 | 硅PNP外延式（PCT的进程） 适用于3瓦放大器的输出级; PC= 1〜2W; 小扁平封装; 2SC2883互补 |