| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -330mA/-0.33A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.31Ω@ VGS = -4.5V, ID = -100mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.1V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ Power Management Switches • 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron = 1.31 Ω (max) (@VGS = -4.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 ○电源管理开关 •1.5-V驱动器 •低导通电阻：R ON= 3.60Ω（最大值）（@ VGS=-1.5 V） RON= 2.70Ω（最大）（@ VGS=-1.8 V） RON= 1.60Ω（最大）（@ VGS=-2.8 V） RON= 1.31Ω（最大）（@ VGS=-4.5 V） |