| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
32V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
32V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
200MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
420~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率PcPower Dissipation |
300mW/0.3W |
| Description & Applications |
general purpose transistor NPN Silicon |
| 描述与应用 |
通用晶体管 NPN硅 |