| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 500mA/-500mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 145mΩ@ VGS = 4.0V, ID = 250mA/ 260mΩ@ VGS = -4V, ID = -250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.5~1.1V/-0.5~-1.1V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅P/ N沟道MOS类型 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻Q1：RDS（ON）=395mΩ（最大）（@ VGS= 1.8 V） Q2：RDS（ON）=430mΩ（最大）（@ VGS=-2.5 V） |