| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
-150V |
| 集电极连续输出电流ICCollector Current(IC) |
-50mA |
| 截止频率fTTranstion Frequency(fT) |
120MHZ |
| 直流电流增益hFEDC Current Gain(hFE) |
70~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-0.8V |
| 耗散功率PcPoWer Dissipation |
800mW/0.8W |
| Description & Applications |
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) . * High Voltage Switching Applications . * High voltage: VCEO = −150 V . * High transition frequency: fT = 120 MHz (typ.). * Small flat package . * PC = 1 to 2 W (mounted on a ceramic substrate) . * Complementary to 2SC2880. |
| 描述与应用 |
TOSHIBA晶体管的硅PNP三重扩散类型（PCT程序）。 *高电压开关应用. *高电压：VCEO=-150 V. *高转换频率：FT =120兆赫（典型值）. *小型扁平封装. * PC= 12 W（安装在陶瓷基板上）. *互补2SC2880. |