| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 4.7KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 20~80 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | FEATURES • RESISTOR BUILT-IN TYPE PNP TRANSISTOR • Compact package • Resistors built-in type • Complementary to FA4L3M |
| 描述与应用 | 特点 •电阻内置型PNP晶体管 •小型封装 •内置式电阻器 •互补FA4L3M的 |