| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | 400mA/0.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.2Ω@ VGS = 1.8V, ID = 20mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.2V |
| 耗散功率PdPower Dissipation | 280mW/0.28W |
| Description & Applications | COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Common Source Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.2V max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • ESD Protected Gate • Lead Free By Design/RoHS Compliant • "Green" Device • Qualified to AEC-Q 101 Standards for High Reliability |
| 描述与应用 | 通用源双N沟道增强型场效应晶体管 特点 •通用源双N沟道MOSFET •低导通电阻 •非常低的栅极阈值电压，1.2V最大 •低输入电容 •开关速度快 •低输入/输出漏 •小型表面贴装封装 •ESD保护门 •对无铅要求的设计/符合限制有害物质指令（RoHS）规范要求 •“绿色”设备 •符合AEC-Q101标准的高可靠性 |