| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流ICCollector Current(IC) |
100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) |
8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
40~90 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
700mW/0.7W |
| Description & Applications |
NPN 8 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities. |
| 描述与应用 |
NPN8 GHz的宽带晶体管 说明 NPN平面外延晶体管的 塑料SOT223信封，意 宽带放大器应用。 该器件具有高增益和 出色的输出电压能力。 |