| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流ICCollector Current(IC) |
80mA |
| 截止频率fTTranstion Frequency(fT) |
7GHZ |
| 直流电流增益hFEDC Current Gain(hFE) |
80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
150mW |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type. VHF~UHF Band Low Noise Amplifier Applications. *Low noise figure, high gain. * NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz). |
| 描述与应用 |
东芝晶体管NPN硅外延平面型。 VHF〜UHF频段低噪声放大器应用。 *低噪声系数，高增益。 *NF=1.1分贝，S21E|2=13分贝（F =1 GHz的）。 |