| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-120v |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
-120V |
| 集电极连续输出电流ICCollector Current(IC) |
-1A |
| 截止频率fTTranstion Frequency(fT) |
|
| 直流电流增益hFEDC Current Gain(hFE) |
60~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
-0.2V |
| 耗散功率PcPoWer Dissipation |
1.25W |
| Description & Applications |
TOSHIBA Transistor Silicon PNP Epitaxial Type . * High-Speed Switching Applications * DC/DC Converters * Strobe Applications * High DC current gain: hFE = 120～300 (IC = ??0.1 A) * Low collector-emitter saturation voltage: VCE (sat) = ??0.2 V (max) * High-speed switching: tf = 120 ns (typ.) |
| 描述与应用 |
东芝晶体管的硅PNP外延型。 *高速开关应用 * DC/ DC转换器 *频闪 *高直流电流增益：HFE=120??300（IC= -0.1） *低集电极 - 发射极饱和电压VCE（sat）= -0.2 V（最大值） *高速开关：TF =120 ns（典型值） |