| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
3A |
| 直流电流增益hFE DC Current Gain(hFE) |
200~1000 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
0.54W |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Type . *Portable Equipment Applications *Switching Applications *Inverter Lighting Applications *Small footprint due to small and thin package *High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) * Low collector-emitter saturation : VCE (sat) = 0.14 V (max) * High-speed switching : tf = 120 ns (typ.) |
| 描述与应用 |
东芝晶体管NPN硅外延型。 *便携式设备的应用 *开关应用 *逆变器照明应用 *由于占地面积小，小而薄的包装 *高直流电流增益：HFE=400~1000（IC=0.3 A） *低集电极 - 发射极饱和：VCE（sat）= 0.14 V（最大值） *高速开关：TF =120 ns（典型值） |