| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
-0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
0.213 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.213 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
80/80 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
200MHZ/250MHZ |
| 耗散功率Pc Power Dissipation |
0.3W |
| Description & Applications |
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
* Including two devices in SM6 (super mini type with 6 leads)
* With built-in bias resistors
* Simplify circuit design
* Reduce a quantity of parts and manufacturing process
|
| 描述与应用 |
开关,逆变器电路,接口电路和驱动电路的应用
*包括两个设备SM6(超级迷你类型与6领先)
*内置偏置电阻
*简化电路设计
*减少数量的零部件和制造过程
|