| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC Collector Current(IC) |
0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
47KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
47KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ
|
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) |
80~140 |
| 截止频率fT Transtion Frequency(fT) |
|
| 耗散功率Pc Power Dissipation |
|
| 描述与应用 |
NPN型晶体管山和PNP型硅表面和整体的偏见
电阻网络
|