| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流ICCollector Current(IC) |
1.5A |
| 截止频率fTTranstion Frequency(fT) |
100MHZ |
| 直流电流增益hFEDC Current Gain(hFE) |
70~140 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
1.5V |
| 耗散功率PcPower Dissipation |
1W |
| Description & Applications |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) . Power Amplifier Applications . Driver Stage Amplifier Applications . * High transition frequency: fT = 100 MHz (typ.) * Complementary to 2SA1225 |
| 描述与应用 |
TOSHIBA晶体管的硅NPN外延式（PCT程序）。 功率放大器应用。 驱动级放大器应用。 *高转换频率：FT =100兆赫（典型值） *互补2SA1225 |