| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−150V |
| 集电极连续输出电流ICCollector Current(IC) |
−500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) |
100~300MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
| 耗散功率PcPoWer Dissipation |
350mW/0.35W |
| Description & Applications |
PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise |
| 描述与应用 |
PNP硅晶体管 产品描述： 中央半导体CMPT5086，CMPT5087类型PNP硅 由外延平面工艺制造的晶体管，环氧树脂模制在一个表面 安装包，专为需要高增益和低噪声的应用 |