| 最大源漏极电压VdsDrain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage |
12V |
| 最大漏极电流IdDrain Current |
-4.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance |
55mΩ@ VGS = -4.5V, ID = -2.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage |
-0.5~-1.2V |
| 耗散功率PdPower Dissipation |
2.2W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) |
| 描述与应用 |
东芝场效应晶体管硅P沟道MOS类型（U-MOSIV） 笔记本电脑应用 便携式设备的应用 •由于占地面积小，小而薄的包装 •低漏源导通电阻RDS（ON）= 40mΩ（典型值） •高正向转移导纳：| YFS|= 9.6 S（典型值） •低漏电流：IDSS= -10μA（最大）（VDS=-20 V） •增强模式：Vth =-0.5〜-1.2 V （VDS= -10 V，ID= -200μA） |