| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
60A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.099Ω/Ohm @33A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd Power Dissipation |
5.3W |
| Description & Applications |
Advanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications. |
| 描述与应用 |
高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 该TO-252包装普遍首选的所有commercialindustrial表面贴装应用，适用于低电压 诸如DC/ DC转换器的应用程序。通孔版本（AP70T03GJ）可用于低配置应用程序 |