| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 70~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | Audio Frequency General Purpose Amplifier Applications Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2712 • Small package APPLICATIONS • Audio Frequency General Purpose Amplifier Applications |
| 描述与应用 | 音频通用放大器应用 特点 •TOSHIBA晶体管的硅PNP外延式（PCT的进程） •高电压和高电流：VCEO=-50 V，IC= -150 mA（最大） •优秀HFE线性：HFE（IC= -0.1毫安）/ HFE（IC=-2毫安）=0.95（典型值） •高HFE：HFE=70〜400 •低噪音：NF=1分贝（典型值），10分贝（最大） •互补2SC2712 •小型封装 应用 •音频通用放大器应用 |