| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | -50mA |
| 截止频率fTTranstion Frequency(fT) | 5.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~100 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS •High fT (in milimeters)fT = 5.5 GHz TYP. •| S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA •High speed switching characteristics •Equivalent NPN transistor is the 2SC2351. •Alternative of the 2SA1424. |
| 描述与应用 | PNP外延硅晶体管微波放大器 特点包装尺寸 •高FT（毫米。）FT =5.5 GHz的TYP。 •S21E| 2=10.0 dB（平均值）。 @ F =1.0 GHz时，VCE= -10 V，IC =-15毫安 •高速开关特性 •等效NPN晶体管2SC2351。 •2SA1424替代。 |