| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
−50V |
| 集电极连续输出电流ICCollector Current(IC) |
−150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) |
140MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage |
−500mV/-0.5V |
| 耗散功率PcPoWer Dissipation |
150mW/0.15W |
| Description & Applications |
PNP Silicon epitaxial planar type General purpose transistor Features Excellent hFE linearity Complements the 2SC5658 |
| 描述与应用 |
PNP硅外延平面型 通用晶体管 特点 优秀HFE线性 补充2SC5658 |