| 逻辑类型Logic Type | 与非门 NAND Gate |
| 电路数Number of Circuits | 1 |
| 输入数Number of Inputs | 2 |
| 电源电压VccVoltage - Supply | 2V~5.5V |
| 静态电流IqCurrent - Quiescent (Max) | 1uA |
| 输出高，低电平电流Current - Output High, Low | -8mA，8mA |
| 低逻辑电平Logic Level - Low | 0.5V~1.65V |
| 高逻辑电平Logic Level - High | 1.5V~3.85V |
| 传播延迟时间@Vcc，CLMax Propagation Delay @ V, Max CL | 7.5ns @ 4.5V ~ 5.5V，50pF |
| Description & Applications | 2-input NAND gate；FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • Balanced propagation delays • Very small 5-pin package • Output capability: standard • Specified from −40 to +125 °C |
| 描述与应用 | 2输入与非门；特性 •对称的输出阻抗 •高抗干扰 •ESD保护： - HBM EIA/JESD22-A114-A超过2000 V - MM EIA/JESD22-A115-A超过200 V - CDM EIA/JESD22-C101超过1000 V。 •低功耗 •平衡传输延迟 •非常小的5引脚封装 •输出能力：标准 •额定温度范围从-40至+125°C |