| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SC6026CT |
| 描述与应用 | 东芝晶体管的硅PNP外延式（PCT的进程） 通用放大器应用 •高电压和高电流：VCEO=-50V，IC=电流100mA（最大值） •优秀的HFE线性 HFE（IC= -0.1毫安）/ HFE（IC=-2毫安）= 0.95（典型值） •高HFE：HFE=120〜400 •2SC6026CT互补 |