| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −700mV/-0.7V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor LF Amp,Electronic governor application Features Very small size making it easy to provide highdensity, small-sized hybrid IC’s. |
| 描述与应用 | PNP硅外延平面晶体管 LF放大器，电子调速器应用 特点 体积非常小，因此很容易提供高密度，小型混合IC。 |