| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流ICCollector Current(IC) | -700mA/-0.7A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor Medium power Transistor Features 1) High breakdown voltage 2) Complements the 2SD1767 |
| 描述与应用 | PNP硅外延平面晶体管 中等功率晶体管 特点 1）高的击穿电压 2）补充2SD1767 |