| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 90MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 390~820 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor Power transistor Features 1) Low saturation voltage, 2) Excellent DC current gain characteristics. |
| 描述与应用 | PNP硅外延平面晶体管 功率晶体管 特点 1）低饱和电压， 2）优秀DC电流增益特性。 |