| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -1.5A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~220 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率PcPoWer Dissipation | 10W |
| Description & Applications | Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC |
| 描述与应用 | PNP硅外延平面型 低频输出放大 互补2SD1295 ■特点 •可直接焊散热片到印刷电路板 •高集电极 - 发射极电压（基本打开）VCEO •大集电极功耗PC |