| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 7GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon epitaxial Transistors HIgh frequency low noise amplifier Features Low noise and high gain High power gain |
| 描述与应用 | NPN硅外延晶体管 高频低噪声放大器 特点 低噪声和高增益 高功率增益 |