| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
75V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流ICCollector Current(IC) |
600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) |
300MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
0.3V~1V |
| 耗散功率PcPower Dissipation |
1.5W |
| Description & Applications |
NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. |
| 描述与应用 |
NPN硅平面 外延型晶体管 这NPN硅外延晶体管设计用于线性 和开关应用。该设备是设中的采用SOT-223封装 包是专为中等功率表面贴装 的应用程序。 |