| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN Silicon epitaxial Transistors High-Speed Switching Applications Features · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SC3361-applied sets to be made small and slim. Complementary to 2SA1331 |
| 描述与应用 | NPN硅外延晶体管 高速开关应用 特点 ·快速开关速度。 ·高击穿电压。 ·小型封装允许2SC3361应用设置小型和超薄。 互补型2SA1331 |