| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 900V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 800V |
| 集电极连续输出电流ICCollector Current(IC) | 800mA/0.8A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 10 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | NPN Silicon epitaxial Transistors switch regulator and high voltage switching applications High speed DC-DC converter applications Excellent switching time High collector breakdown voltage |
| 描述与应用 | NPN硅外延晶体管 开关稳压器和高电压开关应用 高速的DC-DC转换器应用 出色的开关时间 高集电极击穿电压 |