| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流ICCollector Current(IC) |
150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) |
6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
125~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
1.8W |
| Description & Applications |
Features •SILICON TRANSISTOR •MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR •Low distortion at low supply voltage. IM2 55 dB TYP., IM3 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105 dB /75 •Large PT with surface mount type package. |
| 描述与应用 |
特点 •硅晶体管 •微波低噪声，低失真放大器NPN硅外延晶体管 •低失真，低电源电压。 IM255 dB典型值，IM376分贝TYP。 @ VCE= 5 V，IC= 50 mA时，VO= 105分贝/ 75 •大PT表面贴装型封装。 |