| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 330mV/0.33V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Features •TOSHIBA Transistor Silicon NPN Epitaxial Type •Strobe Flash Applications Medium Power Amplifier Applications •Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A) •Low collector saturation voltage : VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA) •Complementary to 2SA1802 |
| 描述与应用 | 特点 •东芝晶体管的硅NPN外延型 •闪光灯应用中功率放大器应用 •优秀的HFE线性：HFE（1）=200〜600（VCE= 2 V，IC= 0.5 A）：HFE（2）=140（分钟），200（典型值）（VCE=2 V，IC=3 ） •低集电极饱和电压VCE（星期六）=0.5 V（最大值）（IC= A，IB=60毫安） •互补2SA1802 |