| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 1.9GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <500mV/0.5V |
| 耗散功率PcPower Dissipation | 125mW/0.125W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •For high-frequency amplification/oscillation/mixing •High transition frequency fT. •Small collector output capacitance Cob and common base reverse transfer capacitance Crb •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 特点 •NPN硅外延平面型 •对于高频放大/振荡/混合 •高转换频率fT。 •小集电极输出电容芯和共基极反向传输电容CRB •SS-迷你型包装，允许缩减设备通过自动插入磁带包装 |