| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
600V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
600V |
| 集电极连续输出电流ICCollector Current(IC) |
1A |
| 截止频率fTTranstion Frequency(fT) |
30MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
40~80 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
350mV/0.35V |
| 耗散功率PcPower Dissipation |
2W |
| Description & Applications |
Features • SILICON TRANSISTORS • NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING • New package with dimensions in between those of small signal and power signal package • High voltage • Fast switching speed • Complementary transistor with the 2SA1871 |
| 描述与应用 |
特点 •硅晶体管 •NPN硅三重扩散型晶体管高速高压开关 •新的封装，尺寸之间的小信号和功率信号包 •高电压 •开关速度快 •与2SA1871互补晶体管 |