| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 130MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 900~1800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 150mV/0.15V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | relay drive power supply application silicon NPN epitaxial type description 2SC5209 is a silicon NPN epitaxial type transistor. it designed with high voltage,high collector current and hig hFE features * high voltage Vceo=50V * small collector to emitter saturation voltage * high hFE hFE=600~1800 * small package for mounting application audio machine，VCR，relay drive of other electronic machine，power supply |
| 描述与应用 | 继电器驱动电源中的应用 NPN硅外延型 描述 2SC5209硅NPN外延型晶体管。它的设计与高电压，高集电极电流和较高HFE 特点 *高电压VCEO= 50V *小集电极到发射极饱和电压 *高HFE HFE=600〜1800 *安装包小 应用 音频机，录像机，继电器驱动等电子整机，电源 |