| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 14GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES • High fT 14 GHz TYP. • High gain | S21e | *2= 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA • NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA • 6-pin small mini mold package |
| 描述与应用 | NPN外延硅晶体管 微波放大 特点 •高FT 14 GHz的TYP。 •高增益 | S21E|* 2 =14 dB典型值。 @ F =2 GHz时，VCE=3 V，IC=10毫安 •NF= 1.3 dB时，@ F =2 GHz时，VCE= 3 V，IC=3毫安 •6针小型微型模具包 |