| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
| 集电极连续输出电流IC Collector Current(IC) Q1/Q2 |
100MA/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
|
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
| 耗散功率Pc Power Dissipation Q1/Q2 |
150mW/0.15W |
| Description & Applications |
Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half |
| 描述与应用 |
Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half |