| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5.5V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 140mW/0.14W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package (1005 PKG) |
| 描述与应用 | NPN硅RF晶体管 高频低噪声放大器 3引脚引线迷你型 特点 •低电压工作，低相位失真 •OSC申请非常适于 •3引脚引线迷你型包装（1005封装） |