| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 9.0V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5.5V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 5.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package |
| 描述与应用 | NPN硅RF晶体管 高频低噪声 扁平引线3引脚超薄型超超迷你 特点 •低电压工作，低相位失真 •OSC申请非常适于 •扁平引线3引脚薄型超超迷你包装 |