| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~210 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor 1.5V ，3V strobe application featrues * large current capicity and high resistance to breakdown * less power dissipation because of low Vce ，permitting more flashes of light to be emitted * excellent linearity of hFE in the region from low current to high current * ultrasmall size supports high density ,ultrasmall sized hybird ic designs |
| 描述与应用 | NPN平面外延硅晶体管 1.5V，3V频闪应用 featrues *大电流容量为和高耐击穿 *功耗低，允许发出闪烁的光，因为低Vce *卓越的线性度在该地区低电流到大电流HFE *超小尺寸支持高密度，超小尺寸摄录IC设计 |