| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 85~170 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type *general amplification *Complementary to 2SB1219 and 2SB1219A Features *l Low collector to emitter saturation voltage VCE(sat) |
| 描述与应用 | * NPN硅外延平面型 *一般的放大 *互补2SB12192SB1219A 特点 * l低集电极到发射极饱和电压VCE（SAT） |