| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 491mΩ@ VGS = -4V, ID = -400mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.2~-2.6V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ○ High-Speed Switching Applications • 4 V drive • Low ON-resistance:Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V) |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS类型 ○高速开关应用 •4 V驱动器 •低导通电阻：Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V) |