| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 400~800 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 50mV |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | *Silicon NPN epitaxial planer type * low-frequency amplification Features *High foward current transfer ratio hFE. *Low collector to emitter saturation voltage VCE(sat) *High emitter to base voltage VEBO. *Low noise voltage NV. |
| 描述与应用 | * NPN硅外延平面型 *低频放大 特点 *高FOWARD电流传输比HFE。 *低集电极到发射极饱和电压VCE（SAT） *高发射器基极电压VEBO。 *低噪声电压NV。 |