| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 25MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 500~2000 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 2V~3V |
| 耗散功率PcPower Dissipation | |
| Description & Applications | Complementary power Darlington transistors Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode |
| 描述与应用 | Complementary power Darlington transistors HFE线性度好 ■高FT 频率 ■单片达林顿配置 综合反平行集电极 - 发射极二极管 |