| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
30V |
| 集电极连续输出电流ICCollector Current(IC) |
5A |
| 截止频率fTTranstion Frequency(fT) |
170MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
160~320 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
140mV/0.14V |
| 耗散功率PcPower Dissipation |
2W |
| Description & Applications |
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1571 |
| 描述与应用 |
NPN硅外延晶体管低频功率放大器和中速切换 特点 •高电流电容 •低集电极饱和电压 •互补晶体管2SB1571 |