| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | ±20V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel MOS FET Features High-speed switching S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. Low-voltage drive (Vth： −1 to 2V) Low Ron |
| 描述与应用 | 硅P沟道MOS FET 特点 高速开关 S-迷你型包装，使瘦身套和通过自动插入磁带/盒包装。 低电压驱动（VTH：-1至2V） |