| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.4Ω @-50mA,-2.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED SWITCHING APPLICATIONS ANALOG APPLICATIONS high input impedance low gate threshold voltage excellent switching times low drain-source on resistance small package complementary to 2SK2009 |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型 高速开关应用 模拟应用 高输入阻抗 低栅极阈值电压 优良的开关时间 低漏源电阻 小包装 2SK2009互补 |